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| TSM5N50 500V N-Channel Power MOSFET TO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 500 RDS(on)() 1.8 @ VGS =10V ID (A) 2.2 General Description The TSM5N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. Features Low gate charge typical @ 13nC Low Crss typical @ 8.5pF Fast Switching 100% avalanche tested Improved dv/dt capability Block Diagram Ordering Information Part No. TSM5N50CZ C0 Package TO-220 Packing 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Peak Diode Recovery (Note 2) Single Pulse Drain to Source Avalanche Energy (Note 3) Maximum Power Dissipation @Ta = 25 C Operating Junction and Storage Temperature Range o Symbol VDS VGS ID IDM IS dv/dt EAS PD TJ, TSTG Limit 500 30 4.5 18 4.5 4.5 300 85 -55 to +150 Unit V V A A A V/ns mJ W o C Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t 10sec 1/6 Symbol RJC RJA Limit 1.47 62.5 Unit o o C/W C/W Version: A07 TSM5N50 500V N-Channel Power MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min 500 -3.0 ----------------- Typ -1.36 ---4 -13 3.4 6.4 470 75 8.5 13 55 25 35 215 1.26 Max -1.8 5.0 1 100 -1.4 17 --610 95 11 35 120 60 80 --- Unit V V uA nA S V Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS Drain-Source On-State Resistance VGS = 10V, ID = 2.2A RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V IDSS Gate Body Leakage VGS = 30V, VDS = 0V IGSS Forward Transconductance VDS = 50V, ID = 2.2A gfs Diode Forward Voltage IS = 4.5A, VGS = 0V VSD b Dynamic Total Gate Charge Qg VDS = 250V, ID = 4.5A, Gate-Source Charge Qgs VGS = 10V Gate-Drain Charge Qgd Input Capacitance Ciss VDS = 25V, VGS = 0V, Output Capacitance Coss f = 1.0MHz Reverse Transfer Capacitance Crss c Switching Turn-On Delay Time td(on) Turn-On Rise Time VGS = 10V, ID = 4.5A, tr VDD = 250V, RG = 25 Turn-Off Delay Time td(off) Turn-Off Fall Time tf Reverse Recovery Time VGS = 0V, IS = 4.5A, tfr dIF/dt = 100A/us Reverse Recovery Charge Qfr Notes: 1. Pulse test: pulse width 300uS, duty cycle 2% 2. ISD<4.5A, di/dt<200A/us, VDD pF nS uC 2/6 Version: A07 TSM5N50 500V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/6 Version: A07 TSM5N50 500V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Maximum Safe Operating Area Normalized Thermal Transient Impedance, Junction-to-Ambient 4/6 Version: A07 TSM5N50 500V N-Channel Power MOSFET TO-220 Mechanical Drawing DIM A B C D E F G H J K L M N O P TO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.000 10.500 0.394 0.413 3.740 3.910 0.147 0.154 2.440 2.940 0.096 0.116 6.350 0.250 0.381 1.106 0.015 0.040 2.345 2.715 0.092 0.058 4.690 5.430 0.092 0.107 12.700 14.732 0.500 0.581 14.224 16.510 0.560 0.650 3.556 4.826 0.140 0.190 0.508 1.397 0.020 0.055 27.700 29.620 1.060 1.230 2.032 2.921 0.080 0.115 0.255 0.610 0.010 0.024 5.842 6.858 0.230 0.270 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 5/6 Version: A07 TSM5N50 500V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/6 Version: A07 |
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